SCTW60N120G2 - Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package, SCTW60N

所有功能

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• Very fast and robust intrinsIC body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (T_J = 200 °C)

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