展位预定倒计时!500+优质企业云集,西部地区不容错过的电
2025-05-12所有功能
- cription="features-description">
- IPM 3 A, 600 V, RDS(on) = 1.6 Ω, 3-phase Power MOSFET inverter bridge including control ICs for gate driving
- Optimized for low electromagnetic interference
- 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down/pull-up resistors
- Undervoltage lockout
- Internal bootstrap diode
- Interlocking function
- Shutdown function
- cription="features-description">
- Comparator for fault protection against overtemperature and overcurrent
- Op-amp for advanced current sensing
- Optimized pinout for easy board layout
- NTC for temperature control (UL 1434 CA 2 and 4)
- Isolation ratings of 1500 Vrms/min.
- UL recognition: UL 1557 file, E81734
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